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Results 1 to 25 of 1039

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OXIDATION OF HG1-XCDXTE STUDIED WITH SURFACE SENSITIVE TECHNIQUESMORGEN P; SILBERMAN JA; LINDAU I et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 597-610; BIBL. 20 REF.Article

FIELD INDUCED TUNNELING IN HG1-XCDXTE PHOTODIODESANDERSON WW.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1080-1082; BIBL. 13 REF.Article

ELECTRICAL PROPERTIES OF DONOR AND ACCEPTOR IMPLANTED HG 1-X CDXTE FOLLOWING CW CO2 LASER ANNEALINGBAHIR G; KALISH R; NEMIROVSKY Y et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1057-1059; BIBL. 10 REF.Article

LARGE OPTICAL NONLINEARITIES AND CW DEGENERATE FOUR-WAVE MIXING IN HGCDTEJAIN RK; STEEL DG.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 1; PP. 72-77; BIBL. 27 REF.Article

NON-LINEAR REFRACTIVE INDEX CHANGES IN CDHGTE AT 175 K WITH 10.6 MU M RADIATIONHILL JR; PARRY G; MILLER A et al.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 2; PP. 151-156; BIBL. 16 REF.Article

Chemoabrasive polishing of MCT wafersGOLDSTEIN, M; HOROWITZ, A; MAKOVSKY, J et al.Metallography. 1983, Vol 16, Num 3, pp 321-326, issn 0026-0800Article

CHEMICAL VAPOR TRANSPORT AND CRYSTAL GROWTH OF THE HG0.8 CD0.2TE SYSTEM, CRYSTAL MORPHOLOGY AND HOMOGENEITYWIEDEMEIER H; CHANDRA D.1982; Z. ANORG. ALLG. CHEM.; ISSN 0044-2313; DDR; DA. 1982; VOL. 488; PP. 137-158; ABS. GER; BIBL. 31 REF.Article

THE ANOMALOUSLY HIGH DIELECTRIC CONSTANT IN NARROW-GAP SEMI-CONDUCTOR CD0.17HG0.83TEARONZON BA; KOPYLOV AV; MEILIKHOV EZ et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 42; NO 11; PP. 779-782; BIBL. 8 REF.Article

EVIDENCE OF STRESS-MEDIATED HG MIGRATION IN HG1-XCDXTERACCAH PM; LEE U; SILBERMAN JA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 374-376; BIBL. 10 REF.Article

CDTE/HGCDTE INDIUM-DIFFUSED PHOTODIODESMIGLIORATO P; FARROW RFC; DEAN AB et al.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 6; PP. 331-336; BIBL. 13 REF.Article

ELECTRONICALLY SCANNED CMT DETECTOR ARRAY FOR THE 8-14 MU M BANDBALLINGALL RA; BLENKINSOP ID; ELLIOTT CT et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 7; PP. 285-287; BIBL. 1 REF.Article

FOUR-WAVE MIXING VIA OPTICALLY GENERATED FREE CARRIERS IN HG1-XCDXTEYUEN SY.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 590-592; BIBL. 15 REF.Article

THEORY OF GENERATION RECOMBINATION NOISE IN INTRINSIC PHOTOCONDUCTORSSMITH DL.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7051-7060; BIBL. 12 REF.Article

DEEP LEVEL STUDIES OF HG1-XCDXTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

SURFACE POTENTIAL RELAXATION IN A BIASED HG1-XCDXTE METAL-INSULATOR-SEMICONDUCTOR CAPACITORDAUGHERTY M; JANOUSEK BK.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 290-292; BIBL. 12 REF.Article

BACKGROUND AND TEMPERATURE DEPENDENT CURRENT-VOLTAGE CHARACTERISTICS OF HGCDTE PHOTODIODESROSBECK JP; STARR RE; PRICE SL et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6430-6441; BIBL. 27 REF.Article

MTF MODELLING OF BACKSIDE-ILLUMINATED PV DETECTOR ARRAYSCHEUNG DT.1981; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1981; VOL. 21; NO 5; PP. 301-310; BIBL. 3 REF.Article

THEORIE DES PHOTORESISTANCES A SEUILS A BASE DE CADMIUM-MERCURE-TELLUREDRUGOVA AA; OSIPOV VV.1981; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 12; PP. 2384-2391; BIBL. 27 REF.Article

OBSERVATION OF DEFECTS IN MERCURY CADMIUM TELLURIDE CRYSTALS GROWN BY CHEMICAL VAPOR TRANSPORTIRENE EA; TIERNEY E; WIEDEMEIER H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 710-712; BIBL. 8 REF.Article

SPUTTERING YIELD OF CDXHG1-XTE BOMBARDED BY MERCURY IONSZOZIME A; COHEN SOLAL G.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 76; NO 3; PP. 273-282; BIBL. 21 REF.Article

CHEMICAL TRENDS FOR DEFECT ENERGY LEVELS IN HG1-XCDXTEKOBAYASHI A; SANKEY OF; DOW JD et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6367-6379; BIBL. 28 REF.Article

A METHOD FOR ROUTINE CHARACTERISATION OF THE HOLE CONCENTRATION IN P-TYPE-CADMIUM MERCURY TELLURIDEDENNIS PNJ; ELLIOTT CT; JONES CL et al.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 3; PP. 167-169; BIBL. 3 REF.Article

MILLIMETER-WAVE GENERATION AT 110 GHZ BY LASER MODULATION OF A HGCDTC PHOTODIODETAUR Y; CHEUNG DT; HUFFMAN EH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 819-821; BIBL. 9 REF.Article

Silicon nitride passivant for HgCdTe n+p diodesKAJIHARA, N; SUDO, G; MIYAMOTO, Y et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1252-1255, issn 0013-4651Conference Paper

Bipolar transistor action in cadmium mercury tellurideASHLEY, T; CRIMES, G; ELLIOTT, C. T et al.Electronics Letters. 1986, Vol 22, Num 11, pp 611-613, issn 0013-5194Article

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